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cc1120 swrs112h ? june 2011 ? revised july 2015 cc1120 high-performance rf transceiver for narrowband systems 1 device overview 1.1 features 1 ? high-performance, single-chip transceiver ? automatic output power ramping ? adjacent channel selectivity: ? configurable data rates: 0 to 200 kbps 64 db at 12.5-khz offset ? supported modulation formats: 2-fsk, ? blocking performance: 91 db at 10 mhz 2-gfsk, 4-fsk, 4-gfsk, msk, ook ? excellent receiver sensitivity: ? wavematch: advanced digital signal processing for improved sync detect performance ? ? 123 dbm at 1.2 kbps ? rohs-compliant 5-mm 5-mm no-lead qfn ? ? 110 dbm at 50 kbps 32-pin package (rhb) ? ? 127 dbm using built-in coding gain ? regulations ? suitable for systems targeting ? very low phase noise: compliance with ? 111 dbc/hz at 10-khz offset ? europe: etsi en 300 220, etsi en 54-25 ? suitable for systems targeting etsi category 1 ? us: fcc cfr47 part 15, fcc cfr47 part 90, compliance in 169-mhz and 433-mhz bands 24, and 101 ? high spectral efficiency (9.6 kbps in 12.5-khz ? japan: arib rcr std-t30, arib std-t67, channel in compliance with fcc narrowbanding arib std-t108 mandate) ? peripherals and support functions ? separate 128-byte rx and tx fifos ? enhanced wake-on-radio (ewor) ? support for seamless integration with the cc1190 functionality for automatic low-power receive device for increased range giving up to 3-db polling improvement in sensitivity and up to +27-dbm ? includes functions for antenna diversity output power support ? power supply ? support for retransmissions ? wide supply voltage range (2.0 v to 3.6 v) ? support for automatic acknowledge of received ? low current consumption: packets ? rx: 2 ma in rx sniff mode ? tcxo support and control, also in power ? rx: 17 ma peak current in low-power modes mode ? automatic clear channel assessment (cca) for ? rx: 22 ma peak current in listen-before-talk (lbt) systems high-performance mode ? built-in coding gain support for increased ? tx: 45 ma at +14 dbm range and robustness ? power down: 0.12 a ? digital rssi measurement (0.5 a with ewor timer running) ? temperature sensor ? programmable output power up to +16 dbm with 0.4-db step size 1.2 applications ? narrowband ultra-low-power wireless systems ? ieee 802.15.4g systems with channel spacing down to ? home and building automation 12.5 khz ? wireless alarm and security systems ? 169-, 315-, 433-, 868-, 915-, 920-, 950-mhz ? industrial monitoring and control ism/srd band ? wireless healthcare applications ? wireless metering and wireless smart grid ? wireless sensor networks and active rfid (amr and ami) ? private mobile radios 1 an important notice at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. production data. productfolder sample &buy technical documents tools & software support &community
cc1120 swrs112h ? june 2011 ? revised july 2015 www.ti.com 1.3 description the cc1120 device is a fully integrated single-chip radio transceiver designed for high performance at very low-power and low-voltage operation in cost-effective wireless systems. all filters are integrated, thus removing the need for costly external saw and if filters. the device is mainly intended for industrial, scientific, and medical (ism) applications and short range device (srd) frequency bands at 164 to 192 mhz, 274 to 320 mhz, 410 to 480 mhz, and 820 to 960 mhz. the cc1120 device provides extensive hardware support for packet handling, data buffering, burst transmissions, clear channel assessment, link quality indication, and wake-on-radio. the main operating parameters of the cc1120 device can be controlled through an spi interface. in a typical system, the cc1120 device is used with a microcontroller and only a few external passive components. device information (1) part number package body size (nom) cc1120 vqfn (32) 5.00 mm 5.00 mm (1) for more information, see section 8 , mechanical packaging and orderable information 1.4 functional block diagram figure 1-1 shows the system block diagram of the cc1120 device. figure 1-1. functional block diagram 2 device overview copyright ? 2011 ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc1120 cc112x marc main radio control unit ultra low power 16 bit mcu 256 byte fifo ram buffer 4k byte rom rf and dsp frontend packet handler and fifo control configuration and status registers ewor enhanced ultra low power wake on radio timer spi serial configuration and data interface interrupt and io handler system bus pa lna_p lna_n 90db dynamic range adc 90db dynamic range adc high linearity lna 14dbm high efficiency pa channel filter xosc cordic agc automatic gain control, 60db vga range rssi measurements and carrier sense detection highly flexible fsk / ook demodulator (optional bit clock) (optional low jitter serial data output for legacy protocols) data interface with signal chain access xosc_q1 xosc_q2 ultra low power 32khz auto-calibrated rc oscillator (optional 32khz clock intput) csn (chip select) si (serial input) so (serial output) sclk (serial clock) (optional gpio0-3) modulator fully integrated fractional-n frequency synthesizer output power ramping and ook / ask modulation ifamp ifamp (optional autodetected external xosc / tcxo) (optional gpio for antenna diversity) i q battery sensor / temp sensor power on reset
cc1120 www.ti.com swrs112h ? june 2011 ? revised july 2015 table of contents 4.14 thermal resistance characteristics for rhb 1 device overview ......................................... 1 package ............................................. 15 1.1 features .............................................. 1 4.15 timing requirements ............................... 16 1.2 applications ........................................... 1 4.16 regulatory standards ............................... 16 1.3 description ............................................ 2 4.17 typical characteristics .............................. 17 1.4 functional block diagram ............................ 2 5 detailed description ................................... 20 2 revision history ......................................... 4 5.1 block diagram ....................................... 20 3 terminal configuration and functions .............. 5 5.2 frequency synthesizer .............................. 20 3.1 pin diagram .......................................... 5 5.3 receiver ............................................. 21 3.2 pin configuration ..................................... 6 5.4 transmitter .......................................... 21 4 specifications ............................................ 7 5.5 radio control and user interface ................... 21 absolute maximum ratings ................................. 7 5.6 enhanced wake-on-radio (ewor) ................ 21 4.1 esd ratings .......................................... 7 5.7 sniff mode ........................................... 22 4.2 recommended operating conditions (general characteristics) ....................................... 7 5.8 antenna diversity ................................... 22 4.3 rf characteristics .................................... 7 5.9 wavematch .......................................... 23 4.4 power consumption summary ....................... 8 6 application, implementation, and layout ......... 24 4.5 receive parameters .................................. 9 6.1 application information .............................. 24 4.6 transmit parameters ................................ 12 7 device and documentation support ............... 26 4.7 pll parameters ..................................... 13 7.1 device support ...................................... 26 4.8 32-mhz clock input (tcxo) ....................... 14 7.2 documentation support ............................. 27 4.9 32-mhz crystal oscillator ........................... 14 7.3 trademarks .......................................... 27 4.10 32-khz clock input .................................. 14 7.4 electrostatic discharge caution ..................... 27 4.11 32-khz rc oscillator ............................... 15 7.5 glossary ............................................. 27 4.12 i/o and reset ....................................... 15 8 mechanical packaging and orderable information .............................................. 28 4.13 temperature sensor ................................ 15 copyright ? 2011 ? 2015, texas instruments incorporated table of contents 3 submit documentation feedback product folder links: cc1120
cc1120 swrs112h ? june 2011 ? revised july 2015 www.ti.com 2 revision history note: page numbers for previous revisions may differ from page numbers in the current version. changes from revision g (september 2014) to revision h page ? moved storage temperature range back to absolute maximum ratings table ............................................... 7 ? updated the formatting of the specifications section ........................................................................... 7 ? changed clock frequency minimum value from: 32 mhz to: 31.25 mhz in 32-mhz clock input (tcxo) .......... 14 ? added clock frequency typical value of 32 mhz to 32-mhz clock input (tcxo) .......................................... 14 ? changed crystal frequency minimum value from: 32 mhz to: 31.25 mhz in the 32-mhz crystal oscillator table . 14 ? added crystal frequency typical value of 32 mhz in the 32-mhz crystal oscillator table ................................. 14 ? changed table title from: wakeup and timing to: timing requirements ............................................... 16 changes from revision f (july 2014) to revision g page ? added " ambient " to the temperature range condition and removed tj from temperature range ......................... 7 ? added data to tcxo table ......................................................................................................... 14 4 revision history copyright ? 2011 ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc1120
cc1120 www.ti.com swrs112h ? june 2011 ? revised july 2015 3 terminal configuration and functions 3.1 pin diagram figure 3-1 shows pin names and locations for the cc1120 device. figure 3-1. package 5-mm 5-mm qfn copyright ? 2011 ? 2015, texas instruments incorporated terminal configuration and functions 5 submit documentation feedback product folder links: cc1120 csn so (gpio1) dvdd avdd_if rbias avdd_rf gpio0 reset_n gpio3gpio2 dvdd vdd_guard cc1120 5 4 3 2 1 lna_p lna_n dcpl_vco avdd_synth1 trx_sw 19 20 21 22 23 avdd_pfd_chp xosc_q2xosc_q1 dcpl_pfd_chp 27 28 29 30 31 dcpl 6 7 pa 18 17 26 25 15 9 10 11 12 13 14 si n.c. dcpl_xosc avdd_xosc 8 sclk 16 24 ext_xosc 32 lpf0 lpf1 avdd_synth2 gnd ground pad
cc1120 swrs112h ? june 2011 ? revised july 2015 www.ti.com 3.2 pin configuration the following table lists the pinout configuration for the cc1120 device. pin type description no. name 1 vdd_guard power 2.0 ? 3.6 v vdd 2 reset_n digital input asynchronous, active-low digital reset 3 gpio3 digital i/o general-purpose i/o 4 gpio2 digital i/o general-purpose i/o 5 dvdd power 2.0 ? 3.6 vdd to internal digital regulator 6 dcpl power digital regulator output to external decoupling capacitor 7 si digital input serial data in 8 sclk digital input serial data clock 9 so(gpio1) digital i/o serial data out (general-purpose i/o) 10 gpio0 digital i/o general-purpose i/o 11 csn digital input active-low chip select 12 dvdd power 2.0 ? 3.6 v vdd 13 avdd_if power 2.0 ? 3.6 v vdd 14 rbias analog external high-precision resistor 15 avdd_rf power 2.0 ? 3.6 v vdd 16 n.c. ? not connected 17 pa analog single-ended tx output (requires dc path to vdd) tx and rx switch. connected internally to gnd in tx and floating 18 trx_sw analog (high-impedance) in rx. 19 lna_p analog differential rx input (requires dc path to ground) 20 lna_n analog differential rx input (requires dc path to ground) 21 dcpl_vco power pin for external decoupling of vco supply regulator 22 avdd_synth1 power 2.0 ? 3.6 v vdd 23 lpf0 analog external loop filter components 24 lpf1 analog external loop filter components 25 avdd_pfd_chp power 2.0 ? 3.6 v vdd 26 dcpl_pfd_chp power pin for external decoupling of pfd and chp regulator 27 avdd_synth2 power 2.0 ? 3.6 v vdd 28 avdd_xosc power 2.0 ? 3.6 v vdd 29 dcpl_xosc power pin for external decoupling of xosc supply regulator crystal oscillator pin 1 (must be grounded if a tcxo or other external 30 xosc_q1 analog clock connected to ext_xosc is used) crystal oscillator pin 2 (must be left floating if a tcxo or other 31 xosc_q2 analog external clock connected to ext_xosc is used) pin for external clock input (must be grounded if a regular crystal 32 ext_xosc digital input connected to xosc_q1 and xosc_q2 is used) ? gnd ground pad the ground pad must be connected to a solid ground plane. 6 terminal configuration and functions copyright ? 2011 ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc1120
cc1120 www.ti.com swrs112h ? june 2011 ? revised july 2015 4 specifications all measurements performed on cc1120em_868_915 rev.1.0.1, cc1120em_955 rev.1.2.1, cc1120em_420_470 rev.1.0.1, or cc1120em_169 rev.1.2. absolute maximum ratings over operating free-air temperature range (unless otherwise noted) (1) (2) min max unit supply voltage (vdd, avdd_x) all supply pins must have the same voltage ? 0.3 3.9 v input rf level +10 dbm voltage on any digital pin max 3.9 v ? 0.3 vdd + 0.3 v voltage on analog pins (including dcpl pins) ? 0.3 2.0 v storage temperature, t stg ? 40 125 c (1) stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under general characteristics is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) all voltage values are with respect to v ss unless otherwise noted. 4.1 esd ratings value unit electrostatic human body model (hbm), per ansi/esda/jedec js001 (1) 2 kv v esd discharge (esd) charged device model (cdm), per jesd22-c101 (2) all pins 500 v performance (1) jedec document jep155 states that 500-v hbm allows safe manufacturing with a standard esd control process. (2) jedec document jep157 states that 250-v hbm allows safe manufacturing with a standard esd control process. 4.2 recommended operating conditions (general characteristics) over operating free-air temperature range (unless otherwise noted) min nom max unit voltage supply range all supply pins must have the same voltage 2.0 3.6 v voltage on digital inputs 0 vdd v ambient temperature range ? 40 85 c 4.3 rf characteristics over operating free-air temperature range (unless otherwise noted) parameter test conditions min typ max unit 820 960 410 480 see swra398 , using the cc112x/cc1175 at 274 to (273.3) (320) 320 mhz, for more information frequency bands mhz 164 192 (205) (240) contact ti for more information about the use of these frequency bands (136.7) (160) in 820 ? 950 mhz band 30 frequency resolution in 410 ? 480 mhz band 15 hz in 164 ? 192 mhz band 6 packet mode 0 200 data rate kbps transparent mode 0 100 data rate step size 1e-4 bps copyright ? 2011 ? 2015, texas instruments incorporated specifications 7 submit documentation feedback product folder links: cc1120
cc1120 swrs112h ? june 2011 ? revised july 2015 www.ti.com 4.4 power consumption summary t a = 25 c, vdd = 3.0 v if nothing else stated parameter test conditions min typ max unit current consumption: static modes 0.12 1 power down with retention a low-power rc oscillator running 0.5 xoff mode crystal oscillator / tcxo disabled 170 a clock running, system waiting with no radio idle mode 1.3 ma activity current consumption, transmit modes tx current consumption +10 dbm 37 ma 950-mhz band (high-performance mode) tx current consumption 0 dbm 26 ma tx current consumption +14 dbm 45 ma 868-, 915-, and 920-mhz bands (high- performance mode) tx current consumption +10 dbm 34 ma tx current consumption +15 dbm 50 ma tx current consumption +14 dbm 434-mhz band (high-performance mode) 45 ma tx current consumption +10 dbm 34 ma tx current consumption +15 dbm 54 ma tx current consumption +14 dbm 169-mhz band (high-performance mode) 49 ma tx current consumption +10 dbm 41 ma low-power mode (1) tx current consumption +10 dbm 32 ma current consumption, receive mode (high-performance mode) (1) 1.2 kbps, 4-byte preamble using rx sniff mode, where the receiver 2 rx wait for sync wakes up at regular intervals to look for an ma 38.4 kbps, 4-byte preamble 13.4 incoming packet (2) 433-, 868-, 915-, 920-, and 22 peak current consumption during packet 950 ? mhz bands rx peak current ma reception at the sensitivity threshold 169-mhz band 23 average current consumption 50 kbps, 5-byte preamble, 40-khz rc check for data packet every 1 second using wake 15 a oscillator used as sleep timer on radio current consumption, receive mode (low-power mode) (1) rx peak current peak current consumption during packet low-power rx 1.2 kbps 17 ma reception at the sensitivity level mode (1) t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated. (2) see the sniff mode design note for more information ( swra428 ). 8 specifications copyright ? 2011 ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc1120
cc1120 www.ti.com swrs112h ? june 2011 ? revised july 2015 4.5 receive parameters all rx measurements made at the antenna connector, to a bit error rate (ber) limit of 1%. parameter test conditions min typ max unit general receive parameters (high-performance mode) (1) saturation +10 dbm digital channel filter programmable bandwidth 8 200 khz iip3, normal mode at maximum gain ? 14 dbm iip3, high linearity mode using 6-db gain reduction in front end ? 8 dbm with carrier sense detection enabled and assuming 12% 4-byte preamble data rate offset tolerance with carrier sense detection disabled 0.2% 1 ? 13 ghz (vco leakage at 3.5 ghz) ? 56 spurious radiated emissions measured according to dbm emissions etsi en 300 220, f c = 869.5 mhz 30 mhz to 1 ghz < ? 57 60 + j60 / 868-, 915-, and 920-mhz bands 30 + j30 optimum 100 + j60 / source 433-mhz band (differential or single-ended rx configurations) ? 50 + j30 impedance 140 + j40 / 169-mhz band 70 + j20 rx performance in 950-mhz band (high-performance mode) (2) 1.2 kbps, dev = 4 khz chf = 10 khz (4) ? 120 1.2 kbps, dev = 20 khz chf = 50 khz (4) ? 114 50 kbps 2gfsk, dev = 25 khz, sensitivity (3) dbm ? 107 chf = 100 khz (4) 200 kbps, dev = 83 khz (outer symbols), ? 100 chf = 200 khz (4) , 4gfsk (5) 12.5 khz (adjacent channel) 51 25 khz (alternate channel) 52 1.2 kbps 2fsk, 12.5-khz channel separation, 4-khz deviation, 1 mhz 73 10-khz channel filter 2 mhz 76 10 mhz 81 50 khz (adjacent channel) 47 + 100 khz (alternate channel) 48 1.2 kbps 2fsk, 50-khz channel separation, 20-khz deviation, 1 mhz 69 50-khz channel filter 2 mhz 71 blocking 10 mhz 78 and db 200 khz (adjacent channel) 43 selectivity 400 khz (alternate channel) 51 50 kbps 2gfsk, 200-khz channel separation, 25-khz deviation, 1 mhz 62 100-khz channel filter (same modulation format as 802.15.4g mandatory mode) 2 mhz 65 10 mhz 71 200 khz (adjacent channel) 37 400 khz (alternate channel) 44 200 kbps 4gfsk, 83-khz deviation (outer 1 mhz 55 symbols), 200-khz channel filter, zero if 2 mhz 58 10 mhz 64 (1) t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated. (2) t a = 25 c, vdd = 3.0 v if nothing else stated. (3) sensitivity can be improved if the tx and rx matching networks are separated. (4) dev is short for deviation, chf is short for channel filter bandwidth (5) bt = 0.5 is used in all gfsk measurements copyright ? 2011 ? 2015, texas instruments incorporated specifications 9 submit documentation feedback product folder links: cc1120
cc1120 swrs112h ? june 2011 ? revised july 2015 www.ti.com receive parameters (continued) all rx measurements made at the antenna connector, to a bit error rate (ber) limit of 1%. parameter test conditions min typ max unit rx performance in 868-, 915-, and 920-mhz bands (high-performance mode) (2) 300 bps with coding gain (using a pn spreading sequence with 4 chips per data bit) dev = 4 khz ? 127 chf = 10 khz (4) 1.2 kbps, dev = 4 khz chf = 10 khz (4) ? 123 1.2 kbps, dev = 10 khz chf = 42 khz (4) ? 120 1.2 kbps, dev = 20 khz chf = 50 khz (4) ? 117 sensitivity dbm 4.8 kbps ook ? 114 38.4 kbps, dev = 20 khz chf = 100 khz (4) ? 110 50 kbps 2gfsk, dev = 25 khz, ? 110 chf = 100 khz (4) 200 kbps, dev = 83 khz (outer symbols), ? 103 chf = 200 khz (4) , 4gfsk 12.5 khz (adjacent channel) 54 25 khz (alternate channel) 54 1.2-kbps 2-fsk, 12.5-khz channel separation, 4-khz deviation, 1 mhz 75 10-khz channel filter 2 mhz 79 10 mhz 87 1 khz 78 1.2-kbps 2-fsk, 12.5-khz channel separation, using settings optimized for 2 khz 82 blocking performance 8 mhz 88 (3-khz deviation, 7.8-khz channel filter, minimum loop bandwidth) 10 mhz 88 50 khz (adjacent channel) 48 + 100 khz (alternate channel) 48 1.2-kbps 2-fsk, 50-khz channel separation, 20-khz deviation, 1 mhz 69 50-khz channel filter 2 mhz 74 10 mhz 81 blocking and + 100 khz (adjacent channel) 42 db selectivity 200 khz (alternate channel) 43 38.4-kbps 2-gfsk, 100-khz channel separation, 20-khz deviation, 100-khz 1 mhz 62 channel filter 2 mhz 66 10 mhz 74 200 khz (adjacent channel) 43 50-kbps 2-gfsk, 200-khz channel 400 khz (alternate channel) 50 separation, 25-khz deviation, 100-khz channel filter 1 mhz 61 (same modulation format as 802.15.4g 2 mhz 65 mandatory mode) 10 mhz 74 200 khz (adjacent channel) 36 400 khz (alternate channel) 44 200-kbps 4-gfsk, 83-khz deviation (outer 1 mhz 55 symbols), 200-khz channel filter, zero if 2 mhz 59 10 mhz 67 1.2 kbps, dev = 4 khz chf = 10 khz (4) , image at image rejection (image compensation enabled) 54 db ? 125 khz 10 specifications copyright ? 2011 ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc1120
cc1120 www.ti.com swrs112h ? june 2011 ? revised july 2015 receive parameters (continued) all rx measurements made at the antenna connector, to a bit error rate (ber) limit of 1%. parameter test conditions min typ max unit rx performance in 434-mhz band (high-performance mode) (2) 1.2 kbps, dev = 4 khz chf = 10 khz (4) ? 123 50 kbps 2gfsk, dev = 25 khz, sensitivity ? 109 dbm chf = 100 khz 1.2 kbps, dev = 20 khz chf = 50 khz (4) ? 116 12.5 khz (adjacent channel) 60 25 khz (alternate channel) 60 1.2 kbps 2fsk, 12.5-khz channel separation, 4-khz deviation, 1 mhz 79 10-khz channel filter 2 mhz 82 10 mhz 91 50 khz (adjacent channel) 54 + 100 khz (alternate channel) 54 blocking 1.2 kbps 2fsk, 50-khz channel and separation, 20-khz deviation, 1 mhz 74 db selectivity 50-khz channel filter 2 mhz 78 10 mhz 86 + 100 khz (adjacent channel) 47 200 khz (alternate channel) 50 38.4 kbps 2gfsk, 100-khz channel separation, 20-khz deviation, 1 mhz 67 100-khz channel filter 2 mhz 71 10 mhz 78 rx performance in 169-mhz band (high-performance mode) (2) 1.2 kbps, dev = 4 khz chf = 10 khz (4) ? 123 sensitivity dbm 1.2 kbps, dev = 20 khz chf = 50 khz (4) ? 117 12.5 khz (adjacent channel) 64 25 khz (alternate channel) 66 1.2 kbps 2fsk, 12.5-khz channel separation, 4-khz deviation, 1 mhz 82 10-khz channel filter 2 mhz 83 blocking 10 mhz 89 and db 50 khz (adjacent channel) 60 selectivity + 100 khz (alternate channel) 60 1.2 kbps 2fsk, 50-khz channel separation, 20-khz deviation, 1 mhz 76 50-khz channel filter 2 mhz 77 10 mhz 83 spurious 1.2 kbps 2fsk, 12.5-khz channel response separation, 4-khz deviation, 70 db rejection 10-khz channel filter 1.2 kbps, dev = 4 khz chf = 10 khz (4) , image at image rejection (image compensation enabled) 66 db ? 125 khz copyright ? 2011 ? 2015, texas instruments incorporated specifications 11 submit documentation feedback product folder links: cc1120
cc1120 swrs112h ? june 2011 ? revised july 2015 www.ti.com receive parameters (continued) all rx measurements made at the antenna connector, to a bit error rate (ber) limit of 1%. parameter test conditions min typ max unit rx performance in low-power mode (1) 1.2 kbps, dev = 4 khz chf = 10 khz (4) ? 111 38.4 kbps, dev = 50 khz chf = 100 khz (4) ? 99 sensitivity dbm 50 kbps 2gfsk, dev = 25 khz, ? 99 chf = 100 khz (4) 12.5 khz (adjacent channel) 46 25 khz (alternate channel) 46 1.2 kbps 2fsk, 12.5-khz channel separation, 4-khz deviation, 1 mhz 73 10-khz channel filter 2 mhz 78 10 mhz 79 50 khz (adjacent channel) 43 + 100 khz (alternate channel) 45 1.2 kbps 2fsk, 50-khz channel separation, 20-khz deviation, 1 mhz 71 50-khz channel filter 2 mhz 74 blocking 10 mhz 75 and db + 100 khz (adjacent channel) 37 selectivity + 200 khz (alternate channel) 43 38.4 kbps 2gfsk, 100-khz channel separation, 20-khz deviation, 100-khz 1 mhz 58 channel filter 2 mhz 62 + 10 mhz 64 + 200 khz (adjacent channel) 43 50 kbps 2gfsk, 200-khz channel + 400 khz (alternate channel) 52 separation, 25-khz deviation, 100-khz channel filter 1 mhz 60 (same modulation format as 802.15.4g 2 mhz 64 mandatory mode) 10 mhz 65 saturation +10 dbm 4.6 transmit parameters t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter test conditions min typ max unit at 950 mhz +12 at 915- and 920-mhz +14 at 915- and 920-mhz with vdd = 3.6 v +15 at 868 mhz +15 maximum output power at 868 mhz with vdd = 3.6 v +16 dbm at 433 mhz +15 at 433 mhz with vdd = 3.6 v +16 at 169 mhz +15 at 169 mhz with vdd = 3.6 v +16 within fine step size range ? 11 minimum output power dbm within coarse step size range ? 40 output power step size within fine step size range 0.4 db 4-gfsk 9.6 kbps in 12.5-khz channel, measured in 100-hz bandwidth at 434 mhz (fcc part 90 mask d ? 75 compliant) adjacent channel power dbc 4-gfsk 9.6 kbps in 12.5-khz channel, measured in ? 58 8.75-khz bandwidth (etsi en 300 220 compliant) 2-gfsk 2.4 kbps in 12.5-khz channel, 1.2-khz deviation ? 61 spurious emissions < ? 60 dbm (not including harmonics) 12 specifications copyright ? 2011 ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc1120
cc1120 www.ti.com swrs112h ? june 2011 ? revised july 2015 transmit parameters (continued) t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter test conditions min typ max unit 2nd harm, 169 mhz ? 39 3rd harm, 169 mhz ? 58 2nd harm, 433 mhz ? 56 3rd harm, 433 mhz ? 51 transmission at +14 dbm (or maximum allowed in dbm applicable band where this is less than +14 dbm) using ti 2nd harm, 450 mhz ? 60 reference design emissions measured according to arib 3rd harm, 450 mhz ? 45 t-96 in 950-mhz band, etsi en 300-220 in 170-, 433-, harmonics 2nd harm, 868 mhz and 868-mhz bands and fcc part 15.247 in 450- and ? 40 915-mhz band fourth harmonic in 915-mhz band will 3rd harm, 868 mhz ? 42 require extra filtering to meet fcc requirements if 2nd harm, 915 mhz 56 transmitting for long intervals ( > 50-ms periods) 3rd harm, 915 mhz 52 db v/m 4th harm, 915 mhz 60 2nd harm, 950 mhz ? 58 dbm 3rd harm, 950 mhz ? 42 868-, 915-, and 920-mhz 35 + j35 optimum bands load ? 433 mhz band 55 + j25 impedance 169 mhz band 80 + j0 4.7 pll parameters t a = 25 c, vdd = 3.0 v if nothing else stated parameter test conditions min typ max unit high-performance mode 10 khz offset ? 99 phase noise in 950-mhz band 100 khz offset ? 99 dbc/hz 1 mhz offset ? 123 10 khz offset ? 99 phase noise in 868-, 915-, 920-mhz bands 100 khz offset ? 100 dbc/hz 1 mhz offset ? 122 10 khz offset ? 106 phase noise in 433-mhz band 100 khz offset ? 107 dbc/hz 1 mhz offset ? 127 10 khz offset ? 111 phase noise in 169-mhz band 100 khz offset ? 116 dbc/hz 1 mhz offset ? 135 copyright ? 2011 ? 2015, texas instruments incorporated specifications 13 submit documentation feedback product folder links: cc1120
cc1120 swrs112h ? june 2011 ? revised july 2015 www.ti.com pll parameters (continued) t a = 25 c, vdd = 3.0 v if nothing else stated parameter test conditions min typ max unit low-power mode (1) 10 khz offset ? 90 phase noise in 950-mhz band 100 khz offset ? 92 dbc/hz 1 mhz offset ? 124 10 khz offset ? 95 phase noise in 868-, 915-, 920-mhz bands 100 khz offset ? 95 dbc/hz 1 mhz offset ? 124 10 khz offset ? 98 phase noise in 433-mhz band 100 khz offset ? 102 dbc/hz 1 mhz offset ? 129 10 khz offset ? 106 phase noise in 169-mhz band 100 khz offset ? 110 dbc/hz 1 mhz offset ? 136 (1) t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated 4.8 32-mhz clock input (tcxo) t a = 25 c, vdd = 3.0 v if nothing else stated parameter test conditions min typ max unit clock frequency 31.25 32 33.6 mhz high input voltage tcxo with cmos output 1.4 vdd tcxo with cmos output (1) directly coupled to pin v low input voltage 0 0.6 ext_osc tcxo clipped sine output clock input amplitude clipped sine output connected to pin ext_osc 0.8 1.5 v (peak-to-peak) through series capacitor (1) for tcxo with cmos output rise and fall time, see section 4.15 . 4.9 32-mhz crystal oscillator t a = 25 c, vdd = 3.0 v if nothing else stated parameter test conditions min typ max unit it is expected that there be will degraded sensitivity at multiples of xosc/2 in rx, and an increase in spurious emissions when the rf channel is close to multiples of xosc in crystal frequency tx. we recommend that the rf channel is 31.25 32 33.6 mhz kept rx_bw/2 away from xosc/2 in rx, and that the level of spurious emissions be evaluated if the rf channel is closer than 1 mhz to multiples of xosc in tx. load capacitance (c l ) 10 pf esr simulated over operating conditions 60 ? 4.10 32-khz clock input t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit clock frequency 32 khz 32-khz clock input pin input high voltage 0.8 vdd v 32-khz clock input pin input high voltage 0.2 vdd v 14 specifications copyright ? 2011 ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc1120
cc1120 www.ti.com swrs112h ? june 2011 ? revised july 2015 4.11 32-khz rc oscillator t a = 25 c, vdd = 3.0 v if nothing else stated parameter test conditions min typ max unit frequency after calibration 32 khz relative to frequency reference frequency accuracy after calibration 0.1% (32-mhz crystal or tcxo) initial calibration time (1) (1) for initial calibration time of the 32-khz rc oscillator, see section 4.15 . 4.12 i/o and reset t a = 25 c, vdd = 3.0 v if nothing else stated parameter test conditions min typ max unit logic input high voltage 0.8 vdd v logic input low voltage 0.2 vdd v logic output high voltage 0.8 vdd v at 4-ma output load or less logic output low voltage 0.2 vdd v power-on reset threshold voltage on dvdd pin 1.3 v 4.13 temperature sensor t a = 25 c, vdd = 3.0 v if nothing else stated (1) parameter test conditions min typ max unit temperature sensor range ? 40 85 c change in sensor output voltage versus change in temperature coefficient 2.66 mv/ c temperature typical sensor output voltage at t a = 25 c, typical output voltage 794 mv vdd = 3.0 v change in sensor output voltage versus change in vdd coefficient 1.17 mv/v vdd (1) the cc1120 device can be configured to provide a voltage proportional to temperature on gpio1. the temperature can be estimated by measuring this voltage (see section 4.13 , temperature sensor ). for more information, refer to cc112x/cc120x on-chip temperature sensor ( swra415 ). 4.14 thermal resistance characteristics for rhb package name description c/w (1) r jc(top) junction-to-case (top) 21.1 r jb junction-to-board 5.3 r ja junction-to-free air 31.3 psi jt junction-to-package top 0.2 psi jb junction-to-board 5.3 r jc(bot) junction-to-case (bottom) 0.8 (1) these values are based on a jedec-defined 2s2p system (with the exception of the theta jc [r jc ] value, which is based on a jedec-defined 1s0p system) and will change based on environment as well as application. for more information, see these eia/jedec standards: ? jesd51-2, integrated circuits thermal test method environmental conditions - natural convection (still air) ? jesd51-3, low effective thermal conductivity test board for leaded surface mount packages ? jesd51-7, high effective thermal conductivity test board for leaded surface mount packages ? jesd51-9, test boards for area array surface mount package thermal measurements power dissipation of 40 mw and an ambient temperature of 25 o c is assumed. copyright ? 2011 ? 2015, texas instruments incorporated specifications 15 submit documentation feedback product folder links: cc1120
cc1120 swrs112h ? june 2011 ? revised july 2015 www.ti.com 4.15 timing requirements t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter test conditions min nom max unit power down to idle depends on crystal 0.4 ms calibration disabled 166 idle to rx/tx s calibration enabled 461 rx/tx turnaround 50 s calibrate when leaving rx/tx 296 enabled rx/tx to idle time s calibrate when leaving rx/tx 0 disabled frequency synthesizer calibration when using scal strobe 391 s time from start rx until valid rssi 12.5-khz channels 4.6 including gain settling (function of channel bandwidth. programmable for ms 200-khz channels 0.3 trade-off between speed and accuracy) 32-mhz clock input (tcxo) (1) tcxo with cmos output rise and fall time 2 ns 32-khz rc oscillator (2) initial calibration time 1.6 ns (1) see section 4.8 for more information about the 32-mhz clock input (tcxo). (2) see section 4.11 for more information about the 32-khz rc oscillator. 4.16 regulatory standards performance mode frequency band suitable for compliance with arib t-96 arib t-108 etsi en 300 220 category 2 etsi en 54-25 fcc part 101 820 ? 960 mhz (1) fcc part 24 submask d fcc part 15.247 fcc part 15.249 fcc part 90 mask g high-performance mode fcc part 90 mask j arib t-67 arib rcr std-30 410 ? 480 mhz (2) etsi en 300 220 category 1 fcc part 90 mask d fcc part 90 mask g etsi en 300 220 category 1 164 ? 192 mhz (2) fcc part 90 mask d etsi en 300 220 category 2 820 ? 960 mhz fcc part 15.247 fcc part 15.249 low-power mode 410 ? 480 mhz etsi en 300 220 category 2 164 ? 192 mhz etsi en 300 220 category 2 (1) performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender such as the cc1190 device (2) performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender 16 specifications copyright ? 2011 ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc1120
cc1120 www.ti.com swrs112h ? june 2011 ? revised july 2015 4.17 typical characteristics t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated. all measurements performed on cc1120em_868_915 rev.1.0.1, cc1120em_955 rev.1.2.1, cc1120em_420_470 rev.1.0.1, or cc1120em_169 rev.1.2. figure 4-17 was measured at the 50- ? antenna connector. 10-khz channel 10-khz channel 1.2 kbps, 4-khz deviation, 1.2 kbps, 4-khz deviation, filter bandwidth filter bandwidth figure 4-1. sensitivity vs temperature figure 4-2. sensitivity vs voltage 10-khz channel 10-khz channel 1.2 kbps, 4-khz deviation, 1.2 kbps, 4-khz deviation, filter bandwidth filter bandwidth figure 4-3. sync word sensitivity vs voltage figure 4-4. rx current vs input level 10-khz channel 10-khz channel 1.2 kbps, 4-khz deviation, 1.2 kbps, 4-khz deviation, filter bandwidth filter bandwidth figure 4-6. selectivity vs offset frequency (12.5-khz channels) figure 4-5. selectivity vs offset frequency (12.5-khz channels) copyright ? 2011 ? 2015, texas instruments incorporated specifications 17 submit documentation feedback product folder links: cc1120 -20 -10 0 10 20 30 40 50 60 70 169.9 169.95 170 170.05 170.1 frequency (mhz) selectivity (db) -10 0 10 20 30 40 50 60 70 859.9 859.95 860 860.05 860.1 frequency (mhz) selectivity (db) 20.8 21.2 21.6 22 22.4 22.8 23.2 -130 -80 -30 20 input level (dbm) rx current (ma) -130 -128 -126 -124 -122 -120 -118 -116 -114 3 5 7 9 11 13 15 17 sync word detect threshold sensitivity (dbm) -125 -124 -123 -122 -121 -120 -40 0 40 80 temperature (oc) sensitivity (dbm) -124 -123 -122 -121 -120 2 2.5 3 3.5 supply voltage (v) sensitivity (dbm)
cc1120 swrs112h ? june 2011 ? revised july 2015 www.ti.com typical characteristics (continued) 10-khz channel filter max setting, 170 mhz, 3.6 v 1.2 kbps, 4-khz deviation, bandwidth figure 4-7. rssi vs input level figure 4-8. output power vs temperature max setting, 170 mhz, figure 4-9. output power vs voltage figure 4-10. output power at 868 mhz vs pa power setting figure 4-11. tx current at 868 mhz figure 4-12. phase noise in 868-mhz band vs pa power setting 18 specifications copyright ? 2011 ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc1120 0 10 20 30 40 50 60 7f 7b 77 73 6f 6b 67 63 5f 5b 57 53 4f 4b 47 43 pa power setting tx current (ma) 6 8 10 12 14 16 18 2 2.5 3 3.5 supply voltage (v) output power (dbm) -50 -40 -30 -20 -10 0 10 20 7f 7b 77 73 6f 6b 67 63 5f 5b 57 53 4f 4b 47 43 pa power setting output power (dbm) 15 15.5 16 16.5 17 -40 0 40 80 temperature (oc) output power (dbm) -40 -20 0 20 40 60 80 100 -150 -100 -50 0 input level (dbm) rssi
cc1120 www.ti.com swrs112h ? june 2011 ? revised july 2015 typical characteristics (continued) 9.6 kbps in 12.5-khz channel 1.2 kbps 2-fsk, dev = 4 khz figure 4-13. fcc part 90 mask d figure 4-14. eye diagram figure 4-16. gpio output low voltage vs current being sinked figure 4-15. gpio output high voltage vs current being sourced figure 4-17. output power vs load impedance (+14-dbm setting) copyright ? 2011 ? 2015, texas instruments incorporated specifications 19 submit documentation feedback product folder links: cc1120 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 0 5 10 15 20 25 30 35 current (ma) gpio output high voltage (v) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 35 current (ma) gpio output low voltage (mv)
cc1120 swrs112h ? june 2011 ? revised july 2015 www.ti.com 5 detailed description 5.1 block diagram figure 5-1 shows the system block diagram of the cc1120 devices. figure 5-1. system block diagram 5.2 frequency synthesizer at the center of the cc1120 device there is a fully integrated, fractional-n, ultra-high-performance frequency synthesizer. the frequency synthesizer is designed for excellent phase noise performance, providing very high selectivity and blocking performance. the system is designed to comply with the most stringent regulatory spectral masks at maximum transmit power. either a crystal can be connected to xosc_q1 and xosc_q2, or a tcxo can be connected to the ext_xosc input. the oscillator generates the reference frequency for the synthesizer, as well as clocks for the analog-to-digital converter (adc) and the digital part. to reduce system cost, cc1120 device has high-accuracy frequency estimation and compensation registers to measure and compensate for crystal inaccuracies. this compensation enables the use of lower cost crystals. if a tcxo is used, the cc1120 device automatically turns on and off the tcxo when needed to support low-power modes and wake-on- radio operation. 20 detailed description copyright ? 2011 ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc1120 cc112x marc main radio control unit ultra low power 16 bit mcu 256 byte fifo ram buffer 4k byte rom rf and dsp frontend packet handler and fifo control configuration and status registers ewor enhanced ultra low power wake on radio timer spi serial configuration and data interface interrupt and io handler system bus pa lna_p lna_n 90db dynamic range adc 90db dynamic range adc high linearity lna 14dbm high efficiency pa channel filter xosc cordic agc automatic gain control, 60db vga range rssi measurements and carrier sense detection highly flexible fsk / ook demodulator (optional bit clock) (optional low jitter serial data output for legacy protocols) data interface with signal chain access xosc_q1 xosc_q2 ultra low power 32khz auto-calibrated rc oscillator (optional 32khz clock intput) csn (chip select) si (serial input) so (serial output) sclk (serial clock) (optional gpio0-3) modulator fully integrated fractional-n frequency synthesizer output power ramping and ook / ask modulation ifamp ifamp (optional autodetected external xosc / tcxo) (optional gpio for antenna diversity) i q battery sensor / temp sensor power on reset
cc1120 www.ti.com swrs112h ? june 2011 ? revised july 2015 5.3 receiver the cc1120 device features a highly flexible receiver. the received rf signal is amplified by the low- noise amplifier (lna) and is down-converted in quadrature (i/q) to the intermediate frequency (if). at if, the i/q signals are digitized by the high dynamic-range adcs. an advanced automatic gain control (agc) unit adjusts the front-end gain, and enables the cc1120 device to receive strong and weak signals, even in the presence of strong interferers. high-attenuation channels and data filtering enable reception with strong neighbor channel interferers. the i/q signal is converted to a phase and magnitude signal to support the fsk and ook modulation schemes. note a unique i/q compensation algorithm removes any problem of i/q mismatch, thus avoiding time-consuming and costly i/q image calibration steps. the cc1120 device only requires preamble to settle the agc. the minimum number of preamble required is 0.5 byte. 5.4 transmitter the cc1120 transmitter is based on direct synthesis of the rf frequency (in-loop modulation). to use the spectrum effectively, the cc1120 device has extensive data filtering and shaping in tx mode to support high throughput data communication in narrowband channels. the modulator also controls power ramping to remove issues such as spectral splattering when driving external high-power rf amplifiers. 5.5 radio control and user interface the cc1120 digital control system is built around the main radio control (marc), which is implemented using an internal high-performance, 16-bit ultra-low-power processor. marc handles power modes, radio sequencing, and protocol timing. a 4-wire spi serial interface is used for configuration and data buffer access. the digital baseband includes support for channel configuration, packet handling, and data buffering. the host mcu can stay in power-down mode until a valid rf packet is received. this greatly reduces power consumption. when the host mcu receives a valid rf packet, it burst-reads the data. this reduces the required computing power. the cc1120 radio control and user interface are based on the widely used cc1101 transceiver. this relationship enables an easy transition between the two platforms. the command strobes and the main radio states are the same for the two platforms. for legacy formats, the cc1120 device also supports two serial modes. ? synchronous serial mode: the cc1120 device performs bit synchronization and provides the mcu with a bit clock with associated data. ? transparent mode: the cc1120 device outputs the digital baseband signal using a digital interpolation filter to eliminate jitter introduced by digital filtering and demodulation. 5.6 enhanced wake-on-radio (ewor) ewor, using a flexible integrated sleep timer, enables automatic receiver polling with no intervention from the mcu. when the cc1120 device enters rx mode, it listens and then returns to sleep if a valid rf packet is not received. the sleep interval and duty cycle can be configured to make a trade-off between network latency and power consumption. incoming messages are time-stamped to simplify timer re- synchronization. the ewor timer runs off an ultra-low-power 32-khz rc oscillator. to improve timing accuracy, the rc oscillator can be automatically calibrated to the rf crystal in configurable intervals. copyright ? 2011 ? 2015, texas instruments incorporated detailed description 21 submit documentation feedback product folder links: cc1120
cc1120 swrs112h ? june 2011 ? revised july 2015 www.ti.com 5.7 sniff mode the cc1120 device supports quick start up times, and requires few preamble bits. sniff mode uses these conditions to dramatically reduce the current consumption while the receiver is waiting for data. because the cc1120 device can wake up and settle much faster than the duration of most preambles, it is not required to be in rx mode continuously while waiting for a packet to arrive. instead, the enhanced wake-on-radio feature can be used to put the device into sleep mode periodically. by setting an appropriate sleep time, the cc1120 device can wake up and receive the packet when it arrives with no performance loss. this sequence removes the need for accurate timing synchronization between transmitter and receiver, and lets the user trade off current consumption between the transmitter and receiver. for more information, see the sniff mode design note ( swra428 ). 5.8 antenna diversity antenna diversity can increase performance in a multipath environment. an external antenna switch is required. the cc1201 device uses one of the gpio pins to automatically control the switch. this device also supports differential output control signals typically used in rf switches. if antenna diversity is enabled, the gpio alternates between high and low states until a valid rf input signal is detected. an optional acknowledge packet can be transmitted without changing the state of the gpio. an incoming rf signal can be validated by received signal strength or by using the automatic preamble detector. using the automatic preamble detector ensures a more robust system and avoids the need to set a defined signal strength threshold (such a threshold sets the sensitivity limit of the system). 22 detailed description copyright ? 2011 ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc1120
cc1120 www.ti.com swrs112h ? june 2011 ? revised july 2015 5.9 wavematch advanced capture logic locks onto the synchronization word and does not require preamble settling bytes. therefore, receiver settling time is reduced to the settling time of the agc, typically 4 bits. the wavematch feature also greatly reduces false sync triggering on noise, further reducing the power consumption and improving sensitivity and reliability. the same logic can also be used as a high- performance preamble detector to reliably detect a valid preamble in the channel. see swrc046 for more information. figure 5-2. receiver configurator in smartrf ? studio copyright ? 2011 ? 2015, texas instruments incorporated detailed description 23 submit documentation feedback product folder links: cc1120
cc1120 swrs112h ? june 2011 ? revised july 2015 www.ti.com 6 application, implementation, and layout note information in the following applications section is not part of the ti component specification, and ti does not warrant its accuracy or completeness. ti ? s customers are responsible for determining suitability of components for their purposes. customers should validate and test their design implementation to confirm system functionality. 6.1 application information 6.1.1 typical application circuit note this section is intended only as an introduction. the reference designs listed in section 6.1.2 show everything required. very few external components are required for the operation of the cc1120 device. figure 6-1 shows a typical application circuit. the board layout will greatly influence the rf performance of the cc1120 device. figure 6-1 does not show decoupling capacitors for power pins. figure 6-1. typical application circuit 24 application, implementation, and layout copyright ? 2011 ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc1120 (optional control pin from cc1120) avdd_pfd_chp xosc_q2xosc_q1 dcpl_pfd_chp avdd_synth2 dcpl_xosc avdd_xosc ext_xosc reset_ngpio3 gpio2 dvdd vdd_guarddcpl si sclk csn so (gpio1) dvdd rbias avdd_if avdd_rf n.c. gpio0 lna_p lna_n dcpl_vco avdd_synth1 pa trx_sw lpf0 lpf1 vdd vdd vdd vdd vdd cc1120 5 4 3 2 16 7 8 13 12 11 10 9 1415 16 20 21 22 23 2419 18 17 28 29 30 31 32 2726 25 vdd vdd 32 mhz crystal optional xosc/ tcxo mcu connectionspi interface and optional gpio pins vdd vdd vdd
cc1120 www.ti.com swrs112h ? june 2011 ? revised july 2015 6.1.2 ti reference designs the following reference designs are available for the cc1120 device: cc1120em-868-915-rd cc1120em 868- to 915-mhz reference design this rf layout reference design demonstrates good decoupling and layout techniques for a low power rf device operating in the 868-mhz and 915-mhz frequency bands. cc1120em 868/915 mhz reference design ( swrc222 ) cc112x ipc 868- and 915-mhz 2-layer reference design ( swrr106 ) cc112x ipc 868- and 915-mhz 4-layer reference design ( swrr107 ) cc1120em-169-rd cc1120em 169-mhz reference design this rf layout reference design demonstrates good decoupling and layout techniques for a low power rf device operating in the 169-mhz frequency band. ( swrc220 ) cc1120em-420-470-rd cc1120em 420- to 470-mhz reference design this rf layout reference design demonstrates good decoupling and layout techniques for a low power rf device operating in the 420-470 mhz frequency band. ( swrc221 ) copyright ? 2011 ? 2015, texas instruments incorporated application, implementation, and layout 25 submit documentation feedback product folder links: cc1120
cc1120 swrs112h ? june 2011 ? revised july 2015 www.ti.com 7 device and documentation support 7.1 device support 7.1.1 development support 7.1.1.1 configuration software the cc1120 device can be configured using the smartrf studio software ( swrc046 ). the smartrf studio software is highly recommended for obtaining optimum register settings, and for evaluating performance and functionality. 7.1.2 device and development-support tool nomenclature to designate the stages in the product development cycle, ti assigns prefixes to the part numbers of all microprocessors (mpus) and support tools. each device has one of three prefixes: x, p, or null (no prefix) (for example, cc1120). texas instruments recommends two of three possible prefix designators for its support tools: tmdx and tmds. these prefixes represent evolutionary stages of product development from engineering prototypes (tmdx) through fully qualified production devices and tools (tmds). device development evolutionary flow: x experimental device that is not necessarily representative of the final device's electrical specifications and may not use production assembly flow. p prototype device that is not necessarily the final silicon die and may not necessarily meet final electrical specifications. null production version of the silicon die that is fully qualified. support tool development evolutionary flow: tmdx development-support product that has not yet completed texas instruments internal qualification testing. tmds fully qualified development-support product. x and p devices and tmdx development-support tools are shipped against the following disclaimer: "developmental product is intended for internal evaluation purposes." production devices and tmds development-support tools have been characterized fully, and the quality and reliability of the device have been demonstrated fully. ti's standard warranty applies. predictions show that prototype devices (x or p) have a greater failure rate than the standard production devices. texas instruments recommends that these devices not be used in any production system because their expected end-use failure rate still is undefined. only qualified production devices are to be used. ti device nomenclature also includes a suffix with the device family name. this suffix indicates the package type (for example, rhb) and the temperature range (for example, blank is the default commercial temperature range) provides a legend for reading the complete device name for any cc1120 device. for orderable part numbers of cc1120 devices in the qfn package types, see the package option addendum of this document, the ti website (www.ti.com), or contact your ti sales representative. 26 device and documentation support copyright ? 2011 ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc1120
cc1120 www.ti.com swrs112h ? june 2011 ? revised july 2015 7.2 documentation support the following documents supplement the cc1120 transceiver. copies of these documents are available on the internet at www.ti.com . tip: enter the literature number in the search box provided at www.ti.com. swru295 cc112x/cc1175 low-power high performance sub-1 ghz rf transceivers/transmitter user's guide swra398 using the cc112x/cc1175 at 274 to 320 mhz swrc046 smartrf studio software swra428 cc112x/cc120x sniff mode application note swrz039 cc112x, cc1175 silicon errata swrr106 cc112x ipc 868- and 915-mhz 2-layer reference design swrr107 cc112x ipc 868- and 915-mhz 4-layer reference design swrc220 cc1120em 169-mhz reference design swrc221 cc1120em 420- to 470-mhz reference design swrc222 cc1120em 868- to 915-mhz reference design 7.2.1 community resources the following links connect to ti community resources. linked contents are provided "as is" by the respective contributors. they do not constitute ti specifications and do not necessarily reflect ti's views; see ti's terms of use . ti e2e ? online community ti's engineer-to-engineer (e2e) community. created to foster collaboration among engineers. at e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. design support ti's design support quickly find helpful e2e forums along with design support tools and contact information for technical support. 7.3 trademarks smartrf, e2e are trademarks of texas instruments. 7.4 electrostatic discharge caution this integrated circuit can be damaged by esd. texas instruments recommends that all integrated circuits be handled with appropriate precautions. failure to observe proper handling and installation procedures can cause damage. esd damage can range from subtle performance degradation to complete device failure. precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 7.5 glossary slyz022 ? ti glossary . this glossary lists and explains terms, acronyms, and definitions. copyright ? 2011 ? 2015, texas instruments incorporated device and documentation support 27 submit documentation feedback product folder links: cc1120
cc1120 swrs112h ? june 2011 ? revised july 2015 www.ti.com 8 mechanical packaging and orderable information the following pages include mechanical packaging and orderable information. this information is the most current data available for the designated devices. this data is subject to change without notice and revision of this document. for browser-based versions of this data sheet, refer to the left-hand navigation. 28 mechanical packaging and orderable information copyright ? 2011 ? 2015, texas instruments incorporated submit documentation feedback product folder links: cc1120
package option addendum www.ti.com 23-jun-2015 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish (6) msl peak temp (3) op temp (c) device marking (4/5) samples cc1120rhbr active vqfn rhb 32 3000 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr -40 to 85 cc1120 cc1120rhbt active vqfn rhb 32 250 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr -40 to 85 cc1120 cc1120rhmr obsolete vqfn rhm 32 tbd call ti call ti -40 to 85 cc1120 cc1120rhmt obsolete vqfn rhm 32 tbd call ti call ti -40 to 85 cc1120 (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. - the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. (4) there may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) multiple device markings will be inside parentheses. only one device marking contained in parentheses and separated by a "~" will appear on a device. if a line is indented then it is a continuation of the previous line and the two combined represent the entire device marking for that device. (6) lead/ball finish - orderable devices may have multiple material finish options. finish options are separated by a vertical ruled line. lead/ball finish values may wrap to two lines if the finish value exceeds the maximum column width. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and
package option addendum www.ti.com 23-jun-2015 addendum-page 2 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.
tape and reel information *all dimensions are nominal device package type package drawing pins spq reel diameter (mm) reel width w1 (mm) a0 (mm) b0 (mm) k0 (mm) p1 (mm) w (mm) pin1 quadrant cc1120rhbr vqfn rhb 32 3000 330.0 12.4 5.3 5.3 1.5 8.0 12.0 q2 cc1120rhbt vqfn rhb 32 250 180.0 12.4 5.3 5.3 1.5 8.0 12.0 q2 package materials information www.ti.com 23-jun-2015 pack materials-page 1
*all dimensions are nominal device package type package drawing pins spq length (mm) width (mm) height (mm) cc1120rhbr vqfn rhb 32 3000 338.1 338.1 20.6 cc1120rhbt vqfn rhb 32 250 210.0 185.0 35.0 package materials information www.ti.com 23-jun-2015 pack materials-page 2

important notice texas instruments incorporated and its subsidiaries (ti) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per jesd46, latest issue, and to discontinue any product or service per jesd48, latest issue. buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. all semiconductor products (also referred to herein as ? components ? ) are sold subject to ti ? s terms and conditions of sale supplied at the time of order acknowledgment. ti warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in ti ? s terms and conditions of sale of semiconductor products. testing and other quality control techniques are used to the extent ti deems necessary to support this warranty. except where mandated by applicable law, testing of all parameters of each component is not necessarily performed. ti assumes no liability for applications assistance or the design of buyers ? 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s goal is to help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and requirements. nonetheless, such components are subject to these terms. no ti components are authorized for use in fda class iii (or similar life-critical medical equipment) unless authorized officers of the parties have executed a special agreement specifically governing such use. only those ti components which ti has specifically designated as military grade or ? enhanced plastic ? are designed and intended for use in military/aerospace applications or environments. buyer acknowledges and agrees that any military or aerospace use of ti components which have not been so designated is solely at the buyer ' s risk, and that buyer is solely responsible for compliance with all legal and regulatory requirements in connection with such use. ti has specifically designated certain components as meeting iso/ts16949 requirements, mainly for automotive use. in any case of use of non-designated products, ti will not be responsible for any failure to meet iso/ts16949. products applications audio www.ti.com/audio automotive and transportation www.ti.com/automotive amplifiers amplifier.ti.com communications and telecom www.ti.com/communications data converters dataconverter.ti.com computers and peripherals www.ti.com/computers dlp ? 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